HMC478MP86 |
RFQ for HMC478MP86 Required Field |
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| Product | Manufacturers | Pack | D/C |
| HMC478MP86 | - | - | 280 |
The HMC478MP86 is a SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifi er covering DC to 4 GHz. This Micro-P packaged amplifi er can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +20 dBm output power. The HMC478MP86 offers 22 dB of gain with a +32 dBm output IP3 at 850 MHz while requiring only 62 mA from a single positive supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.
Typical Application |
Features |
| •The HMC478MP86 is an ideal RF/IF gain block & LO or PA driver:Cellular / PCS / 3GFixed Wireless & WLANCATV, Cable Modem & DBSMicrowave Radio & Test Equipment | ·P1dB Output Power: +18 dBm·Gain: 22 dB·Output IP3: +32 dBm·Cascadable 50 Ohm I/Os·Single Supply: +5V to +8V·Robust 1,000V ESD, Class 1C |
| Collector Bias Voltage (Vcc) | +6.0 Vdc |
| Collector Bias Current (Icc) | 100 mA |
| RF Input Power (RFin)(Vcc = +4.3 Vdc) | +5 dBm |
| Junction Temperature | 150 °C |
| Continuous Pdiss (T = 85 °C) (derate 9 mW/°C above 85 °C) |
0.583 W |
| Thermal Resistance (junction to lead) |
111.5 °C/W |
| orage Temperature | -65 to +150 °C |
| Operating Temperature | -40 to +85 °C |
| ESD Sensitivity (HBM) | Class 1C |
